MMFTN138W MOSFET Datasheet: N-Ch, 50V, 0.22A. Full specification with pinout and replacement list

MMFTN138W Specs and Replacement

Type Designator: MMFTN138W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: SOT323

MMFTN138W substitution

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MMFTN138W datasheet

..1. Size:910K semtech
mmftn138w.pdf pdf_icon

MMFTN138W N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications 1. Gate 2. Source 3. Drain SOT-323 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 50 V Drain-Gate Voltage (RGS 20 K ) VDGR 50 V Gate-Source V... See More ⇒

6.1. Size:154K semtech
mmftn138.pdf pdf_icon

MMFTN138 N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source O Absolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 50 V Drain-Gate Voltage (RGS 20 K ) VDGR 50 V Gate-Source ... See More ⇒

8.1. Size:153K semtech
mmftn123.pdf pdf_icon

MMFTN123 N-Channel Logic Level Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source O Absolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS 20 V Drain Current ID 170 mA Peak Drain Current IDM 680 mA Total Power Dissipation P... See More ⇒

8.2. Size:114K semtech
mmftn170.pdf pdf_icon

MMFTN170 N-Channel Enhancement Mode Field Effect Transistor Feature Voltage controlled small signal switch Drain High saturation current capability Gate 1. Gate 2. Source 3. Drain Source TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS 1 M ) VDGR 60 V V Gate-Source... See More ⇒