2SK1356 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1356
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm
Package: SC67
2SK1356 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1356 Datasheet (PDF)
2sk1356.pdf
isc N-Channel MOSFET Transistor 2SK1356DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain
2sk1359.pdf
2SK1359 .5TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) 2SK1359 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 300 A (max) (VDS = 800 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1
2sk1358.pdf
TOSHIBADiscrete Semiconductors 2SK1358Industrial Applications Unit in mmField Effect TransistorSilicon N Channel MOS Type ( -MOS II.5)High Speed, High Current DC-DC Converter,Relay Drive and Motor Drive ApplicationsFeatures Low Drain-Source ON Resistance- RDS(ON) = 1.1 (Typ.) High Forward Transfer Admittance- Yfs = 4.0S (Typ.) Low Leakage Current-
2sk133 2sk134 2sk135.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sk1352.pdf
isc N-Channel MOSFET Transistor 2SK1352DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain
2sk1351.pdf
isc N-Channel MOSFET Transistor 2SK1351DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain
2sk1350.pdf
isc N-Channel MOSFET Transistor 2SK1350DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 200
2sk1358.pdf
isc N-Channel MOSFET Transistor 2SK1358DESCRIPTIONDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high current DC-DC converter,Relay Drive adn Moto Drives Applications.A
2sk1357.pdf
isc N-Channel MOSFET Transistor 2SK1357DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vol
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
