Справочник MOSFET. 2SK1356

 

2SK1356 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK1356
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4.3 Ohm
   Тип корпуса: SC67

 Аналог (замена) для 2SK1356

 

 

2SK1356 Datasheet (PDF)

 ..1. Size:39K  no
2sk1356.pdf

2SK1356

 ..2. Size:227K  inchange semiconductor
2sk1356.pdf

2SK1356
2SK1356

isc N-Channel MOSFET Transistor 2SK1356DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain

 8.1. Size:408K  toshiba
2sk1359.pdf

2SK1356
2SK1356

2SK1359 .5TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) 2SK1359 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 300 A (max) (VDS = 800 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1

 8.2. Size:569K  toshiba
2sk1358.pdf

2SK1356
2SK1356

TOSHIBADiscrete Semiconductors 2SK1358Industrial Applications Unit in mmField Effect TransistorSilicon N Channel MOS Type ( -MOS II.5)High Speed, High Current DC-DC Converter,Relay Drive and Motor Drive ApplicationsFeatures Low Drain-Source ON Resistance- RDS(ON) = 1.1 (Typ.) High Forward Transfer Admittance- Yfs = 4.0S (Typ.) Low Leakage Current-

 8.3. Size:279K  toshiba
2sk1357.pdf

2SK1356
2SK1356

 8.4. Size:189K  hitachi
2sk133 2sk134 2sk135.pdf

2SK1356
2SK1356

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.5. Size:54K  no
2sk1352.pdf

2SK1356
2SK1356

 8.6. Size:87K  no
2sk1351.pdf

2SK1356
2SK1356

www.DataSheet4U.comwww.DataSheet4U.com

 8.7. Size:54K  no
2sk1350.pdf

2SK1356
2SK1356

 8.8. Size:175K  inchange semiconductor
2sk1352.pdf

2SK1356
2SK1356

isc N-Channel MOSFET Transistor 2SK1352DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain

 8.9. Size:197K  inchange semiconductor
2sk1351.pdf

2SK1356
2SK1356

isc N-Channel MOSFET Transistor 2SK1351DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain

 8.10. Size:214K  inchange semiconductor
2sk1350.pdf

2SK1356
2SK1356

isc N-Channel MOSFET Transistor 2SK1350DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 200

 8.11. Size:238K  inchange semiconductor
2sk1358.pdf

2SK1356
2SK1356

isc N-Channel MOSFET Transistor 2SK1358DESCRIPTIONDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high current DC-DC converter,Relay Drive adn Moto Drives Applications.A

 8.12. Size:203K  inchange semiconductor
2sk1357.pdf

2SK1356
2SK1356

isc N-Channel MOSFET Transistor 2SK1357DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vol

Другие MOSFET... MMFTN3018W , MMFTN3019E , MMFTN3406 , MMFTN501 , MMFTP84W , ST2N7000 , MMFTN138W , 2SK2876-01MR , IRF540N , SD211DE , SD213DE , SD215DE , SST211 , SST213 , SST215 , 2SK3645-01MR , 2SK2663 .

 

 
Back to Top