SST215 Datasheet and Replacement
Type Designator: SST215
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
tr ⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 1.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: TO253
SST215 substitution
SST215 Datasheet (PDF)
sd211de sd213de sd215de sst211 sst213 sst215.pdf

SD-SST211/213/215N-CHANNEL LATERALDMOS SWITCHLinear Integrated Systems ZENER PROTECTEDProduct SummaryFeatures Benefits Applications Ultra-High Speed SwitchingtON: 1 ns High-Speed System Performance Fast Analog Switch Ultra-Low Reverse Capacitance: 0.2 pF Low Insertion Loss at High Frequencies Fast Sample-and-Holds Low Guaranteed rDS @5 V Low Trans
Datasheet: MMFTN138W , 2SK2876-01MR , 2SK1356 , SD211DE , SD213DE , SD215DE , SST211 , SST213 , 10N60 , 2SK3645-01MR , 2SK2663 , 2SK2077 , 2SK1488 , 2SK606 , 2SJ646 , 2SJ169 , 2SJ170 .
History: STF6N62K3 | SSF4004 | FCP260N65S3 | AOB11S60L | S85N042RP | XP152A11E5MR-G | AONY36306
Keywords - SST215 MOSFET datasheet
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History: STF6N62K3 | SSF4004 | FCP260N65S3 | AOB11S60L | S85N042RP | XP152A11E5MR-G | AONY36306



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