L75N75 Specs and Replacement
Type Designator: L75N75
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 660 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO220
L75N75 substitution
- MOSFET ⓘ Cross-Reference Search
L75N75 datasheet
l75n75.pdf
LESHAN RADIO COMPANY, LTD. L75N75 1/7 LESHAN RADIO COMPANY, LTD. L75N75 2/7 LESHAN RADIO COMPANY, LTD. L75N75 3/7 LESHAN RADIO COMPANY, LTD. L75N75 4/7 LESHAN RADIO COMPANY, LTD. L75N75 5/7 LESHAN RADIO COMPANY, LTD. L75N75 6/7 LESHAN RADIO COMPANY, LTD. L75N75 7/7 ... See More ⇒
Detailed specifications: FTP11N08, FTP18N06, FTP18N06N, FTP22N06B, FTU01N60C, L1N60, L2N600, L4N60, BS170, LIRFZ44N, SPI80N03S2-03, SPP80N03S2-03, SPB80N03S2-03, STP80NF70, CL616BA, P0160AI, P0165AI
Keywords - L75N75 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SM6F27NSFP | STB17N80K5
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