CL616BA Specs and Replacement
Type Designator: CL616BA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 163 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm
Package: PDFN5X6P
CL616BA substitution
- MOSFET ⓘ Cross-Reference Search
CL616BA datasheet
cl616ba.pdf
CL616BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6.9m @VGS = 10V 30V 50A PDFN 5X 6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TC = 25 C 50 ID Continuous Drain Current TC = 100 C 31.5 IDM 120 Pulsed Drain Cur... See More ⇒
Detailed specifications: L2N600, L4N60, L75N75, LIRFZ44N, SPI80N03S2-03, SPP80N03S2-03, SPB80N03S2-03, STP80NF70, 5N60, P0160AI, P0165AI, P0170AI, P0260AD, P0260AI, P0260AT, P0260ATF, P0260ATFS
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 2SK2147-01R | CM10N60AZ
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