All MOSFET. CL616BA Datasheet

 

CL616BA Datasheet and Replacement


   Type Designator: CL616BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.3 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm
   Package: PDFN5X6P
 

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CL616BA Datasheet (PDF)

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CL616BA

CL616BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6.9m @VGS = 10V30V 50APDFN 5X 6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C50IDContinuous Drain CurrentTC = 100 C31.5IDM120Pulsed Drain Cur

Datasheet: L2N600 , L4N60 , L75N75 , LIRFZ44N , SPI80N03S2-03 , SPP80N03S2-03 , SPB80N03S2-03 , STP80NF70 , 13N50 , P0160AI , P0165AI , P0170AI , P0260AD , P0260AI , P0260AT , P0260ATF , P0260ATFS .

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