All MOSFET. P0160AI Datasheet

 

P0160AI Datasheet and Replacement


   Type Designator: P0160AI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: TO251
 

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P0160AI Datasheet (PDF)

 ..1. Size:433K  unikc
 p0160ai.pdf pdf_icon

P0160AI

P0160AIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID600V 12 @VGS = 10V 1ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C1IDContinuous Drain Current2TC = 100 C0.6AIDM3Pulsed Drain Current1,2

 8.1. Size:390K  ncepower
 ncep0160ag.pdf pdf_icon

P0160AI

http://www.ncepower.com NCEP0160AGNCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.2. Size:428K  ncepower
 ncep0160a.pdf pdf_icon

P0160AI

Pb Free Producthttp://www.ncepower.com NCEP0160ANCE N-Channel Super Trench Power MOSFET Description The NCEP0160A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Sche

 9.1. Size:432K  ncepower
 ncep0160.pdf pdf_icon

P0160AI

http://www.ncepower.com NCEP0160NCE N-Channel Super Trench Power MOSFET Description The NCEP0160 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

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Datasheet: L4N60 , L75N75 , LIRFZ44N , SPI80N03S2-03 , SPP80N03S2-03 , SPB80N03S2-03 , STP80NF70 , CL616BA , RFP50N06 , P0165AI , P0170AI , P0260AD , P0260AI , P0260AT , P0260ATF , P0260ATFS , P0260ED .

History: R6004KNJ | NTD65N03R-1G | FQB8N90CTM | SPC10N65G | FQP34N20 | AP03N40AJ-HF

Keywords - P0160AI MOSFET datasheet

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