Справочник MOSFET. P0160AI

 

P0160AI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P0160AI
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 4.4 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 58 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 12 Ohm
   Тип корпуса: TO251

 Аналог (замена) для P0160AI

 

 

P0160AI Datasheet (PDF)

 ..1. Size:433K  unikc
 p0160ai.pdf

P0160AI P0160AI

P0160AIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID600V 12 @VGS = 10V 1ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C1IDContinuous Drain Current2TC = 100 C0.6AIDM3Pulsed Drain Current1,2

 8.1. Size:390K  ncepower
 ncep0160ag.pdf

P0160AI P0160AI

http://www.ncepower.com NCEP0160AGNCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.2. Size:428K  ncepower
 ncep0160a.pdf

P0160AI P0160AI

Pb Free Producthttp://www.ncepower.com NCEP0160ANCE N-Channel Super Trench Power MOSFET Description The NCEP0160A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Sche

 9.1. Size:432K  ncepower
 ncep0160.pdf

P0160AI P0160AI

http://www.ncepower.com NCEP0160NCE N-Channel Super Trench Power MOSFET Description The NCEP0160 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

 9.2. Size:333K  ncepower
 ncep0160g.pdf

P0160AI P0160AI

http://www.ncepower.com NCEP0160GNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP0160G uses Super Trench technology that is VDS =100V,ID =60A uniquely optimized to provide the most efficient high RDS(ON)

 9.3. Size:449K  ncepower
 ncep0160f.pdf

P0160AI P0160AI

Pb Free Producthttp://www.ncepower.com NCEP0160FNCE N-Channel Super Trench Power MOSFET Description The NCEP0160F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top