P0260ATF Datasheet. Specs and Replacement

Type Designator: P0260ATF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 47 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm

Package: TO220F

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P0260ATF datasheet

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P0260ATF

P0260ATF / P0260ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 4.4 @VGS = 10V 2A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 A... See More ⇒

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P0260ATF

P0260AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 4.4 @VGS = 10V 2.8A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 30 V TC = 25 C 2.8 ID Continuous Drain Current2 TC = 100 A C 1.8 IDM 3.5 Pulsed Drain Current1 EAS Avalanche Energy 5 mJ... See More ⇒

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P0260ATF

P0260AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.6 @VGS = 10V 600V 2A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.3 A IDM 7 Pulsed Drain Current1... See More ⇒

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P0260ATF

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Detailed specifications: STP80NF70, CL616BA, P0160AI, P0165AI, P0170AI, P0260AD, P0260AI, P0260AT, K4145, P0260ATFS, P0260ED, P0260EI, P0260EIS, P0260ETF, P0270ATF, P0270ATFS, P0303BD

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