P0260ED PDF and Equivalents Search

 

P0260ED Specs and Replacement

Type Designator: P0260ED

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 39 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm

Package: TO252

P0260ED substitution

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P0260ED datasheet

 ..1. Size:771K  unikc
p0260ed.pdf pdf_icon

P0260ED

P0260ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.4 @VGS = 10V 600V 2A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.4 A IDM 8 Pulsed Drain Current1... See More ⇒

 0.1. Size:168K  niko-sem
p0260eda.pdf pdf_icon

P0260ED

N-Channel Enhancement Mode P0260EDA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 600V 4.85 2A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC = 25 C... See More ⇒

 8.1. Size:780K  unikc
p0260etf.pdf pdf_icon

P0260ED

P0260ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.3 @VGS = 10V 600V 2A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.3 A IDM 8 Pulsed Drain Curre... See More ⇒

 8.2. Size:806K  unikc
p0260ei.pdf pdf_icon

P0260ED

P0260EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.4 @VGS = 10V 600V 2A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.4 A IDM 8 Pulsed Drain Current1... See More ⇒

Detailed specifications: P0160AI, P0165AI, P0170AI, P0260AD, P0260AI, P0260AT, P0260ATF, P0260ATFS, IRFZ24N, P0260EI, P0260EIS, P0260ETF, P0270ATF, P0270ATFS, P0303BD, P0303BKA, P0303BV

Keywords - P0260ED MOSFET specs

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