P0260ED - параметры транзистора MOSFET, его аналоги, datasheet

P0260ED Datasheet (PDF)

..1. Size:771K unikc
p0260ed.pdf pdf_icon

P0260EDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.4 @VGS = 10V600V 2ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C2IDContinuous Drain Current2TC = 100 C1.4AIDM8Pulsed Drain Current1

0.1. Size:168K niko-sem
p0260eda.pdf pdf_icon

N-Channel Enhancement Mode P0260EDANIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G600V 4.85 2A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 600 VGate-Source Voltage VGS 30 VTC = 25 C

8.1. Size:780K unikc
p0260etf.pdf pdf_icon

P0260ETFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.3 @VGS = 10V600V 2ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C2IDContinuous Drain Current2TC = 100 C1.3AIDM8Pulsed Drain Curre

8.2. Size:806K unikc
p0260ei.pdf pdf_icon

P0260EIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.4 @VGS = 10V600V 2ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C2IDContinuous Drain Current2TC = 100 C1.4AIDM8Pulsed Drain Current1