P0260ED - аналоги, параметры транзистора - Справочник транзисторов

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P0260ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.4 @VGS = 10V 600V 2A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.4 A IDM 8 Pulsed Drain Current1

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N-Channel Enhancement Mode P0260EDA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 600V 4.85 2A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC = 25 C

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P0260ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.3 @VGS = 10V 600V 2A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.3 A IDM 8 Pulsed Drain Curre

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P0260EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.4 @VGS = 10V 600V 2A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.4 A IDM 8 Pulsed Drain Current1