All MOSFET. TD357EG Datasheet

 

TD357EG Datasheet and Replacement


   Type Designator: TD357EG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 74 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 257 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO252
 

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TD357EG Datasheet (PDF)

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TD357EG

TD357EGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6m @VGS = 10V30V 74ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C74IDContinuous Drain Current2TC = 100 C44AIDM130Pulsed Drain Current1IASAvalanche Current 35EA

Datasheet: P7004EV , P7006BL , P7502CMG , P7503BMG , P75N02LDG , PZP003BYB , PZP103BYB , TD304BH , IRF740 , TD381BA , TD422BL , P4506BD , P4506BV , P45N02LDG , P45N02LI , P45N03LTFG , P0460AD .

History: IRHY9230CM | HCU60R580

Keywords - TD357EG MOSFET datasheet

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