TD357EG PDF and Equivalents Search

 

TD357EG Specs and Replacement

Type Designator: TD357EG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 74 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 257 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO252

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TD357EG datasheet

 ..1. Size:385K  unikc
 td357eg.pdf pdf_icon

TD357EG

TD357EG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6m @VGS = 10V 30V 74A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 74 ID Continuous Drain Current2 TC = 100 C 44 A IDM 130 Pulsed Drain Current1 IAS Avalanche Current 35 EA... See More ⇒

Detailed specifications: P7004EV, P7006BL, P7502CMG, P7503BMG, P75N02LDG, PZP003BYB, PZP103BYB, TD304BH, IRF740, TD381BA, TD422BL, P4506BD, P4506BV, P45N02LDG, P45N02LI, P45N03LTFG, P0460AD

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