P45N02LI Datasheet and Replacement

P45N02LIN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = 10V25V 26ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C26IDContinuous Drain CurrentTC = 100 C16AIDM70Pulsed Drain Current1IASAvalanche Cu

P45N02LDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25V 20m @VGS = 10V 32ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC = 25 C32IDContinuous Drain Current1TC = 100 C20AIDM110Pulsed Drain Curren

UNISONIC TECHNOLOGIES CO., LTD UTP45N02 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. FEATURES * 45A, 20V * RDS(ON) = 0.022 * Temperature compensating PSPICE model * Be driven directly from CMOS, NMO

Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal

Philips Semiconductors Product specification TrenchMOS transistor PHP45N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 45 Afeatures very low on-state r

PHP45N03LT; PHB45N03LT;PHD45N03LTN-channel TrenchMOS transistorRev. 06 05 October 2000 Product specification1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP45N03LT in SOT78 (TO-220AB)PHB45N03LT in SOT404 (D2-PAK)PHD45N03LT in SOT428 (D-PAK).2. Features Low on-state resistance

Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal

PHP/PHB/PHD45N03LTAN-channel enhancement mode field-effect transistorRev. 02 02 November 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP45N03LTA in SOT78 (TO-220AB)PHB45N03LTA in SOT404 (D2-PAK)PHD45N03LTA in SOT428 (D-PAK).2. Features Low on-state resistance

PHP45N03LT; PHB45N03LT;PHD45N03LTN-channel TrenchMOS transistorRev. 06 05 October 2000 Product specification1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP45N03LT in SOT78 (TO-220AB)PHB45N03LT in SOT404 (D2-PAK)PHD45N03LT in SOT428 (D-PAK).2. Features Low on-state resistance

Preliminary Data Sheet NP45N06VUK, NP45N06PUK R07DS0953EJ010060 V 45 A N-channel Power MOS FET Rev.1.00Application: Automotive Nov 20, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A) Low Ciss: Ci

RFG45N06, RFP45N06, RF1S45N06SMData Sheet January 200245A, 60V, 0.028 Ohm, N-Channel Power FeaturesMOSFETs 45A, 60VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.028power field effect transistors. They are advanced power Temperature Compensating PSPICE ModelMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the

SUP/SUB45N05-20LVishay SiliconixN-Channel 50-V (D-S), 175_C MOSFET, Logic LevelPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.018 @ VGS = 10 V50 "45 a"0.020 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB45N05-20LTop ViewN-Channel MOSFETSUP45N05-20LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol

SUP/SUB45N05-20LVishay SiliconixN-Channel 50-V (D-S), 175_C MOSFET, Logic LevelPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.018 @ VGS = 10 V50 "45 a"0.020 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB45N05-20LTop ViewN-Channel MOSFETSUP45N05-20LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol

SUP45N03-13LVishay SiliconixN-Channel 30-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.013 @ VGS = 10 V 45a300.02 @ VGS = 4.5 V 45aDTO-220ABGDRAIN connected to TABG D SSTop ViewN-Channel MOSFETSUP45N03-13LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30Gate-Source Volt

IPB45N06S4-09IPI45N06S4-09, IPP45N06S4-09OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 9.2mDS(on),max I 45 ADFeatures N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB45N06S4-09 PG-TO263-

IPB45N06S4L-08IPI45N06S4L-08, IPP45N06S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.9mDS(on),max I 45 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

IPB45N04S4L-08IPI45N04S4L-08, IPP45N04S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 7.6mDS(on),max I 45 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp

NTP45N06L, NTB45N06LPower MOSFET45 Amps, 60 VoltsLogic Level, N-Channel TO-220 andD2PAKhttp://onsemi.comDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridge45 AMPERES, 60 VOLTScircuits.RDS(on) = 28 mWFeaturesN-Channel Higher Current RatingD Lower RDS(on) Lower VDS(on) Lower Capa

NTP45N06, NTB45N06Power MOSFET45 Amps, 60 VoltsN-Channel TO-220 and D2PAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeatures Higher Current Rating45 AMPERES, 60 VOLTS Lower RDS(on)RDS(on) = 26 mW Lower VDS(on) Lower CapacitancesN-Channel Lower

NTP45N06L, NTB45N06LPower MOSFET45 Amps, 60 VoltsLogic Level, N-Channel TO-220 andD2PAKhttp://onsemi.comDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridge45 AMPERES, 60 VOLTScircuits.RDS(on) = 28 mWFeaturesN-Channel Higher Current RatingD Lower RDS(on) Lower VDS(on) Lower Capa

RFP45N06LE, RF1S45N06LESMData Sheet October 1999 File Number 4076.245A, 60V, 0.028 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 45A, 60VThese are N-Channel enhancement mode power MOSFETs rDS(ON) = 0.028manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproaching those

P45N03LTFGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = 10V25V 36ATO-220FABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC = 25 C36IDContinuous Drain CurrentTC = 100 C22AIDM140Pulsed Drain Curr

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP45N06 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~175 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc

SMDTypee IorDIP Type Tra n s is tICsSMD TypeSMD TypeSMDType CTypSMDDIP Type ICProduct specificationKHP45N03LTTO220FeaturesLow on-state resistanceFast switching.1Gate2Drain3SourceAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 30VGate-Source Voltage VGS 15Drain current (DC) ID 45 APower Dissipation PD 86 Wtherma

December 2014 BVDSS = 60 V RDS(on) typ = 3.7m HRP45N06K ID = 150 A 60V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 120 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3.7 m (Typ.

December 2014 BVDSS = 80 V RDS(on) typ = 3.6m HRP45N08K ID = 150 A 80V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 155nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3.6 m (Typ.)