P0460ATF PDF and Equivalents Search

 

P0460ATF Specs and Replacement

Type Designator: P0460ATF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO220F

P0460ATF substitution

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P0460ATF datasheet

 0.1. Size:518K  unikc
p0460atf-s.pdf pdf_icon

P0460ATF

P0460ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 2 @VGS = 10V 4A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 A C 2.5 I... See More ⇒

 8.1. Size:441K  unikc
p0460ad.pdf pdf_icon

P0460ATF

P0460AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2 @VGS = 10V 600V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 V TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.4 A IDM 20 Pulsed Drain Current1... See More ⇒

 8.2. Size:437K  unikc
p0460as-t.pdf pdf_icon

P0460ATF

P0460AS / P0460AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 2 @VGS = 10V 4A TO-263 TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5 A IDM 20 Pulse... See More ⇒

 8.3. Size:471K  unikc
p0460ai.pdf pdf_icon

P0460ATF

P0460AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2 @VGS = 10V 600V 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 V TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.4 A IDM 20 Pulsed Drain Current1... See More ⇒

Detailed specifications: P4506BV, P45N02LDG, P45N02LI, P45N03LTFG, P0460AD, P0460AI, P0460AS, P0460AT, IRF640N, P0460BTF, P0460BTFS, P0460CTF-P, P0460ED, P0460EI, P0460EIS, P0460ETF, P0465AD

Keywords - P0460ATF MOSFET specs

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