P0460ATF - аналоги, параметры транзистора - Справочник транзисторов

P0460ATF даташит

0.1. Size:518K unikc
p0460atf-s.pdf pdf_icon

P0460ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 2 @VGS = 10V 4A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 A C 2.5 I

8.1. Size:441K unikc
p0460ad.pdf pdf_icon

P0460AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2 @VGS = 10V 600V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 V TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.4 A IDM 20 Pulsed Drain Current1

8.2. Size:437K unikc
p0460as-t.pdf pdf_icon

P0460AS / P0460AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 2 @VGS = 10V 4A TO-263 TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5 A IDM 20 Pulse

8.3. Size:471K unikc
p0460ai.pdf pdf_icon

P0460AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2 @VGS = 10V 600V 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 V TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.4 A IDM 20 Pulsed Drain Current1

Другие MOSFET... P4506BV , P45N02LDG , P45N02LI , P45N03LTFG , P0460AD , P0460AI , P0460AS , P0460AT , IRF640N , P0460BTF , P0460BTFS , P0460CTF-P , P0460ED , P0460EI , P0460EIS , P0460ETF , P0465AD .