All MOSFET. P0460ETF Datasheet

 

P0460ETF Datasheet and Replacement


   Type Designator: P0460ETF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO220F
 

 P0460ETF substitution

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P0460ETF Datasheet (PDF)

 ..1. Size:470K  unikc
 p0460etf.pdf pdf_icon

P0460ETF

P0460ETFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.3 @VGS = 10V600V 4ATO-220F 100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.5AIDM20

 8.1. Size:809K  unikc
 p0460ed.pdf pdf_icon

P0460ETF

P0460EDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.3 @VGS = 10V600V 4ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.5AIDM20Pulsed Drain Current

 8.2. Size:445K  unikc
 p0460eis.pdf pdf_icon

P0460ETF

P0460EISN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.3 @VGS = 10V600V 4A1.GATE2.DRAIN3.SOURCETO-251(IS)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.5

 8.3. Size:794K  unikc
 p0460ei.pdf pdf_icon

P0460ETF

P0460EIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.3 @VGS = 10V600V 4ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.5AIDM20Pulsed Drain Current

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Datasheet: P0460AT , P0460ATF , P0460BTF , P0460BTFS , P0460CTF-P , P0460ED , P0460EI , P0460EIS , IRFP250N , P0465AD , P0465ATF , P0465ATFS , P0465CD , P0465CI , P0465CIS , P0465CS , P0465CT .

History: AFP8451 | LSB65R125HT | P1260AT | RT3K11M | PHD18NQ10T | H02N60SI | PMT760EN

Keywords - P0460ETF MOSFET datasheet

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