P0460ETF PDF and Equivalents Search

 

P0460ETF Specs and Replacement

Type Designator: P0460ETF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: TO220F

P0460ETF substitution

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P0460ETF datasheet

 ..1. Size:470K  unikc
 p0460etf.pdf pdf_icon

P0460ETF

P0460ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3 @VGS = 10V 600V 4A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5 A IDM 20 ... See More ⇒

 8.1. Size:809K  unikc
 p0460ed.pdf pdf_icon

P0460ETF

P0460ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3 @VGS = 10V 600V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5 A IDM 20 Pulsed Drain Current... See More ⇒

 8.2. Size:445K  unikc
 p0460eis.pdf pdf_icon

P0460ETF

P0460EIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3 @VGS = 10V 600V 4A 1.GATE 2.DRAIN 3.SOURCE TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5 ... See More ⇒

 8.3. Size:794K  unikc
 p0460ei.pdf pdf_icon

P0460ETF

P0460EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3 @VGS = 10V 600V 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5 A IDM 20 Pulsed Drain Current... See More ⇒

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Detailed specifications: P0460AT, P0460ATF, P0460BTF, P0460BTFS, P0460CTF-P, P0460ED, P0460EI, P0460EIS, IRFB4115, P0465AD, P0465ATF, P0465ATFS, P0465CD, P0465CI, P0465CIS, P0465CS, P0465CT

Keywords - P0460ETF MOSFET specs

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