P0465ATF MOSFET. Datasheet pdf. Equivalent
Type Designator: P0465ATF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 80 nS
Drain-Source Capacitance (Cd): 69 pF
Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
Package: TO220F
P0465ATF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P0465ATF Datasheet (PDF)
1.1. p0465atf-s.pdf 
Size:515K _unikc
P0465ATF / P0465ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.5Ω @VGS = 10V 650V 4A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 TC = 25 ° C 4 ID Continuous Drain Current2 TC = 100 ° A C 2.2 IDM
4.1. p0465ad.pdf Size:544K _unikc
P0465AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.5Ω @VGS = 10V 650V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 TC = 25 ° C 4 ID Continuous Drain Current2 TC = 100 ° C 2.5 A IDM 7 Pulsed Drain Current1ï
5.1. p0465ctf-s.pdf Size:789K _unikc
P0465CTF/P0465CTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.7Ω @VGS = 10V 650V 4A 100% UIS tested TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 TC = 25 ° C 4 ID Continuous Drain Current2 TC = 100 ° C
5.2. p0465ct.pdf Size:434K _unikc
P0465CT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6mΩ @VGS = 10V 650V 4A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Current1
5.3. p0465cs.pdf Size:428K _unikc
P0465CS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6mΩ @VGS = 10V 650V 4A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Current1
5.4. p0465ci.pdf Size:474K _unikc
P0465CI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6Ω @VGS = 10V 650V 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current2 TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Current1
5.5. p0465cis.pdf Size:731K _unikc
P0465CIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6Ω @VGS = 10V 650V 4A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current2 TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Cur
5.6. p0465cd.pdf Size:422K _unikc
P0465CD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6Ω @VGS = 10V 650V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current2 TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Current1
Datasheet: P0460BTF , P0460BTFS , P0460CTF-P , P0460ED , P0460EI , P0460EIS , P0460ETF , P0465AD , IRF510 , P0465ATFS , P0465CD , P0465CI , P0465CIS , P0465CS , P0465CT , P0465CTF , P0465CTFS .
