P0502CEA Specs and Replacement
Type Designator: P0502CEA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 635 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: PDFN3X3P
P0502CEA substitution
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P0502CEA datasheet
p0502cea.pdf
P0502CEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 5m @VGS = 4.5V 20V 70A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 8 TC = 25 C 70 TC = 100 C 44 ID Continuous Drain Current1,2 TA = 25 C 17 A TA... See More ⇒
Detailed specifications: P0465CI, P0465CIS, P0465CS, P0465CT, P0465CTF, P0465CTFS, P0470ATF, P0470ATFS, IRF4905, P0510AT, P0550AD, P0550AT, P0550ATF, P0550BD, P0550BT, P0550ED, P0550EI
Keywords - P0502CEA MOSFET specs
P0502CEA cross reference
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History: BUK961R5-30E
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