P0550AT MOSFET. Datasheet pdf. Equivalent
Type Designator: P0550AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.1 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 93 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220
P0550AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P0550AT Datasheet (PDF)
p0550at.pdf
P0550ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID500V 1.5 @VGS = 10V 5ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C5IDContinuous Drain Current2TC = 100 C3AIDM15Pulsed Drain Current1 ,
p0550atf.pdf
P0550ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.5 @VGS = 10V500V 5ATO-220F 100% UIS testedABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C5IDContinuous Drain Current2TC = 100 AC3IDM15Pul
p0550ad.pdf
P0550ADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID500V 1.5 @VGS = 10V 5ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS500VGate-Source Voltage VGS30TC = 25 C5IDContinuous Drain Current2TC = 100 C3AIDM15Pulsed Drain Current1 ,
vp0550.pdf
Supertex inc. VP0550P-Channel Enhancement-ModeVertical DMOS FETsFeaturesGeneral Description Free from secondary breakdownThe Supertex VP0550 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. Ease of parallelingThis combination produ
p0550bt.pdf
P0550BTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID500V 1.75 @VGS = 10V 4.5ATO-220100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C4.5IDContinuous Drain Current2TC = 100 C3AIDM15P
p0550ed.pdf
P0550EDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.55 @VGS = 10V500V 5ATO-252100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C5IDContinuous Drain Current2TC = 100 C3.2AIDM20Pu
p0550ei.pdf
P0550EIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.55 @VGS = 10V500V 5ATO-251100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C5IDContinuous Drain Current2TC = 100 C3.2AIDM20Pu
p0550etf-s.pdf
P0550ETF / P0550ETFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.55 @VGS = 10V500V 5ATO-220F TO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C5IDContinuous Drain Current2TC = 100 C3.2AIDM
p0550bd.pdf
P0550BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID500V 1.75 @VGS = 10V 4.5ATO-252100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C4.5IDContinuous Drain Current2TC = 100 AC3IDM15Pu
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
