All MOSFET. P0550ETF Datasheet

 

P0550ETF Datasheet and Replacement


   Type Designator: P0550ETF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 71 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO220F
 

 P0550ETF substitution

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P0550ETF Datasheet (PDF)

 0.1. Size:533K  unikc
 p0550etf-s.pdf pdf_icon

P0550ETF

P0550ETF / P0550ETFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.55 @VGS = 10V500V 5ATO-220F TO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C5IDContinuous Drain Current2TC = 100 C3.2AIDM

 8.1. Size:499K  unikc
 p0550ed.pdf pdf_icon

P0550ETF

P0550EDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.55 @VGS = 10V500V 5ATO-252100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C5IDContinuous Drain Current2TC = 100 C3.2AIDM20Pu

 8.2. Size:825K  unikc
 p0550ei.pdf pdf_icon

P0550ETF

P0550EIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.55 @VGS = 10V500V 5ATO-251100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C5IDContinuous Drain Current2TC = 100 C3.2AIDM20Pu

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Datasheet: P0510AT , P0550AD , P0550AT , P0550ATF , P0550BD , P0550BT , P0550ED , P0550EI , TK10A60D , P0550ETFS , P057AAT , PZC502FYB , PZD502CMA , PZD502CYB , PT530BA , PT542BA , PD632BA .

History: SI4409DY

Keywords - P0550ETF MOSFET datasheet

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