P0550ETF - аналоги, параметры транзистора - Справочник транзисторов

P0550ETF даташит

0.1. Size:533K unikc
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P0550ETF / P0550ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.55 @VGS = 10V 500V 5A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage 30 TC = 25 C 5 ID Continuous Drain Current2 TC = 100 C 3.2 A IDM

8.1. Size:499K unikc
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P0550ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.55 @VGS = 10V 500V 5A TO-252 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage 30 TC = 25 C 5 ID Continuous Drain Current2 TC = 100 C 3.2 A IDM 20 Pu

8.2. Size:825K unikc
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P0550EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.55 @VGS = 10V 500V 5A TO-251 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage 30 TC = 25 C 5 ID Continuous Drain Current2 TC = 100 C 3.2 A IDM 20 Pu

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