All MOSFET. PZC502FYB Datasheet

 

PZC502FYB MOSFET. Datasheet pdf. Equivalent

Type Designator: PZC502FYB

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 0.7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 16 pF

Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm

Package: SOT523

PZC502FYB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PZC502FYB Datasheet (PDF)

0.1. pzc502fyb.pdf Size:538K _unikc

PZC502FYB
PZC502FYB

PZC502FYB P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 550mΩ @VGS = -4.5V -0.7A SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 TA = 25 ° C -0.7 ID Continuous Drain Current TA = 70 ° A C -0.6 IDM -3 Pulsed Drain

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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