All MOSFET. PZC502FYB Datasheet

 

PZC502FYB Datasheet and Replacement


   Type Designator: PZC502FYB
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: SOT523
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PZC502FYB Datasheet (PDF)

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PZC502FYB

PZC502FYBP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-20V 550m @VGS = -4.5V -0.7ASOT-523ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -20VVGSGate-Source Voltage 8TA = 25 C-0.7IDContinuous Drain CurrentTA = 70 AC-0.6IDM-3Pulsed Drain

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SHD230303 | IRFZ48RS | IXTH13N80 | SVS70R420SE3 | WSD30L30DN | FTK3022 | IPI47N10S-33

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