PZC502FYB Datasheet and Replacement
Type Designator: PZC502FYB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 16 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: SOT523
PZC502FYB substitution
PZC502FYB Datasheet (PDF)
pzc502fyb.pdf
PZC502FYBP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-20V 550m @VGS = -4.5V -0.7ASOT-523ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -20VVGSGate-Source Voltage 8TA = 25 C-0.7IDContinuous Drain CurrentTA = 70 AC-0.6IDM-3Pulsed Drain
Datasheet: P0550ATF , P0550BD , P0550BT , P0550ED , P0550EI , P0550ETF , P0550ETFS , P057AAT , IRF4905 , PZD502CMA , PZD502CYB , PT530BA , PT542BA , PD632BA , PD636BA , PD648BA , PD696BA .
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