All MOSFET. PZC502FYB Datasheet

 

PZC502FYB Datasheet and Replacement


   Type Designator: PZC502FYB
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 0.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: SOT523
 

 PZC502FYB substitution

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PZC502FYB Datasheet (PDF)

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PZC502FYB

PZC502FYBP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-20V 550m @VGS = -4.5V -0.7ASOT-523ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -20VVGSGate-Source Voltage 8TA = 25 C-0.7IDContinuous Drain CurrentTA = 70 AC-0.6IDM-3Pulsed Drain

Datasheet: P0550ATF , P0550BD , P0550BT , P0550ED , P0550EI , P0550ETF , P0550ETFS , P057AAT , 4435 , PZD502CMA , PZD502CYB , PT530BA , PT542BA , PD632BA , PD636BA , PD648BA , PD696BA .

History: VBE1302 | IPB180N04S4-01

Keywords - PZC502FYB MOSFET datasheet

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