All MOSFET. PD636BA Datasheet

 

PD636BA Datasheet and Replacement


   Type Designator: PD636BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 48 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252
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PD636BA Datasheet (PDF)

 ..1. Size:474K  unikc
 pd636ba.pdf pdf_icon

PD636BA

PD636BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V30V 48A100% RG Test100% UIL TestTO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC= 25 C48IDContinuous Drain Current2TC= 100 C30.5AI

 ..2. Size:302K  niko-sem
 pd636ba.pdf pdf_icon

PD636BA

PD636BA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G30V 9m 48A 2. DRAIN 3. SOURCE S100% RG Test , 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source

Datasheet: P0550ETFS , P057AAT , PZC502FYB , PZD502CMA , PZD502CYB , PT530BA , PT542BA , PD632BA , STP80NF70 , PD648BA , PD696BA , PD6A8BA , PD485BA , PD504BA , PD506BA , PD510BA , PD516BA .

History: IRFU540ZPBF | BSB280N15NZ3G | 12N65KG-TF1-T | FQD3N60CTM-WS | R5016ANJ | ELM13401CA | DH150N12B

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