All MOSFET. PD648BA Datasheet

 

PD648BA Datasheet and Replacement


   Type Designator: PD648BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 94 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 325 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO252
 

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PD648BA Datasheet (PDF)

 ..1. Size:438K  unikc
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PD648BA

PD648BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID3.9m @VGS = 10V30V 94ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C94IDContinuous Drain Current2TC = 100 C59AIDM170Pulsed Drain Curre

 ..2. Size:204K  niko-sem
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PD648BA

PD648BA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G30V 3.9m 94A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TC = 25

Datasheet: P057AAT , PZC502FYB , PZD502CMA , PZD502CYB , PT530BA , PT542BA , PD632BA , PD636BA , IRFP250 , PD696BA , PD6A8BA , PD485BA , PD504BA , PD506BA , PD510BA , PD516BA , PD517BA .

History: 2SJ319L | FMP13N60E | SE720 | PDC3803R | VBMB165R18 | APM2317A | IRF8113GPBF

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