PD648BA MOSFET Datasheet: N-Ch, 30V, 94A. Full specification with pinout and replacement list

PD648BA Specs and Replacement

Type Designator: PD648BA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 94 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 325 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: TO252

PD648BA substitution

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PD648BA datasheet

..1. Size:438K unikc
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PD648BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 3.9m @VGS = 10V 30V 94A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TC = 25 C 94 ID Continuous Drain Current2 TC = 100 C 59 A IDM 170 Pulsed Drain Curre... See More ⇒

..2. Size:204K niko-sem
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PD648BA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 30V 3.9m 94A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TC = 25... See More ⇒

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