All MOSFET. PD648BA Datasheet

 

PD648BA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PD648BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 62.5 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V
   Maximum Drain Current |Id|: 94 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 41.3 nC
   Rise Time (tr): 18 nS
   Drain-Source Capacitance (Cd): 325 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0039 Ohm
   Package: TO252

 PD648BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PD648BA Datasheet (PDF)

 ..1. Size:438K  unikc
 pd648ba.pdf

PD648BA PD648BA

PD648BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID3.9m @VGS = 10V30V 94ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C94IDContinuous Drain Current2TC = 100 C59AIDM170Pulsed Drain Curre

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