All MOSFET. PD648BA Datasheet

 

PD648BA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PD648BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 94 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41.3 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 325 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO252

 PD648BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PD648BA Datasheet (PDF)

 ..1. Size:438K  unikc
 pd648ba.pdf

PD648BA PD648BA

PD648BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID3.9m @VGS = 10V30V 94ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C94IDContinuous Drain Current2TC = 100 C59AIDM170Pulsed Drain Curre

 ..2. Size:204K  niko-sem
 pd648ba.pdf

PD648BA PD648BA

PD648BA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G30V 3.9m 94A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TC = 25

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2N65F | SWU7N80D | BUK438W-800A

 

 
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