PD696BA Specs and Replacement
Type Designator: PD696BA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 206 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO252
PD696BA substitution
- MOSFET ⓘ Cross-Reference Search
PD696BA datasheet
pd696ba.pdf
PD696BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6m @VGS = 10V 30V 66A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TC= 25 C 66 ID Continuous Drain Current2 TC= 100 C 41 A IDM 150 Pulsed Drain Current1 ... See More ⇒
Detailed specifications: PZC502FYB, PZD502CMA, PZD502CYB, PT530BA, PT542BA, PD632BA, PD636BA, PD648BA, STP80NF70, PD6A8BA, PD485BA, PD504BA, PD506BA, PD510BA, PD516BA, PD517BA, PD533BA
Keywords - PD696BA MOSFET specs
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