All MOSFET. PD485BA Datasheet

 

PD485BA Datasheet and Replacement


   Type Designator: PD485BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 43 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 308 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO252
 

 PD485BA substitution

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PD485BA Datasheet (PDF)

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PD485BA

PD485BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V-40V -43ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40 VVGSGate-Source Voltage 20 VTC = 25 C-43IDContinuous Drain CurrentTC = 100 C-27AIDM-100Pulsed Drain C

Datasheet: PZD502CYB , PT530BA , PT542BA , PD632BA , PD636BA , PD648BA , PD696BA , PD6A8BA , IRFZ24N , PD504BA , PD506BA , PD510BA , PD516BA , PD517BA , PD533BA , PD537BA , PD548BA .

History: CS12N10 | NP84N075MUE | SIHFB9N65A | SUM110N08-07P | DMS3014SFG | HMS4264 | DMN1032UCB4

Keywords - PD485BA MOSFET datasheet

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