PD516BA Specs and Replacement
Type Designator: PD516BA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 159 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO252
PD516BA substitution
- MOSFET ⓘ Cross-Reference Search
PD516BA datasheet
pd516ba.pdf
PD516BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7.5m @VGS = 10V 30V 55A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 55 ID Continuous Drain Current2 TC= 100 C 35 A IDM 150 Pulsed Drain Current1... See More ⇒
Detailed specifications: PD636BA, PD648BA, PD696BA, PD6A8BA, PD485BA, PD504BA, PD506BA, PD510BA, IRFP250, PD517BA, PD533BA, PD537BA, PD548BA, PD570BA, PD612BA, PD628BA, P0806AT
Keywords - PD516BA MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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