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P082ABD8 Specs and Replacement

Type Designator: P082ABD8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO252

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P082ABD8 datasheet

 ..1. Size:540K  unikc
 p082abd8.pdf pdf_icon

P082ABD8

P082ABD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 8m @VGS = 10V 25V 52A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC= 25 C 52 ID Continuous Drain Current TC= 100 C 33 A IDM 130 Pulsed Drain Current1 IAS Avalanche Current 23 EAS ... See More ⇒

Detailed specifications: PD548BA, PD570BA, PD612BA, PD628BA, P0806AT, P0806ATF, P0806ATX, P0808ATG, STF13NM60N, P0850AT, P0850ATF, P085AATX, P0903BD, P0903BDA, P0903BDB, P0903BDG, P0903BDL

Keywords - P082ABD8 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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