All MOSFET. P082ABD8 Datasheet

 

P082ABD8 Datasheet and Replacement


   Type Designator: P082ABD8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
 

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P082ABD8 Datasheet (PDF)

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P082ABD8

P082ABD8N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID8m @VGS = 10V25V 52ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C52IDContinuous Drain CurrentTC= 100 C33AIDM130Pulsed Drain Current1IASAvalanche Current 23EAS

Datasheet: PD548BA , PD570BA , PD612BA , PD628BA , P0806AT , P0806ATF , P0806ATX , P0808ATG , IRF2807 , P0850AT , P0850ATF , P085AATX , P0903BD , P0903BDA , P0903BDB , P0903BDG , P0903BDL .

History: IXFR44N50Q | HGS130N12SL | IPD033N06N | AP83T02GJ-HF | STP80N6F6 | QJD1210006 | BSC042N03MS

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