All MOSFET. P085AATX Datasheet

 

P085AATX Datasheet and Replacement


   Type Designator: P085AATX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 1170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO220
 

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P085AATX Datasheet (PDF)

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P085AATX

P085AATXN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID7.5m @VGS = 10V55V 110ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C110IDContinuous Drain Current1TC = 100 C69AIDM300Pulsed Drain Current2IASAvalanche Current 1

Datasheet: PD628BA , P0806AT , P0806ATF , P0806ATX , P0808ATG , P082ABD8 , P0850AT , P0850ATF , K2611 , P0903BD , P0903BDA , P0903BDB , P0903BDG , P0903BDL , P0603BD , P0603BDB , P0603BDD .

History: HU5N50 | IRF7401 | MDF5N50FBTH | BLF6G20S-45

Keywords - P085AATX MOSFET datasheet

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