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P085AATX Specs and Replacement

Type Designator: P085AATX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 1170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO220

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P085AATX datasheet

 ..1. Size:459K  unikc
p085aatx.pdf pdf_icon

P085AATX

P085AATX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7.5m @VGS = 10V 55V 110A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 110 ID Continuous Drain Current1 TC = 100 C 69 A IDM 300 Pulsed Drain Current2 IAS Avalanche Current 1... See More ⇒

Detailed specifications: PD628BA, P0806AT, P0806ATF, P0806ATX, P0808ATG, P082ABD8, P0850AT, P0850ATF, 8N60, P0903BD, P0903BDA, P0903BDB, P0903BDG, P0903BDL, P0603BD, P0603BDB, P0603BDD

Keywords - P085AATX MOSFET specs

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