P062ABD8 Datasheet. Specs and Replacement

Type Designator: P062ABD8  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 504 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO252

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P062ABD8 datasheet

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P062ABD8

P062ABD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6m @VGS = 10V 25V 60A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC= 25 C 60 ID Continuous Drain Current TC= 100 C 38 A IDM 150 Pulsed Drain Current1 IAS Avalanche Current 30 EAS ... See More ⇒

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P062ABD8

P062ABDD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 5.8m @VGS = 10V 25V 83A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC= 25 C 83 ID Continuous Drain Current2 TC= 100 C 53 A IDM 180 Pulsed Drain Current... See More ⇒

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P062ABD8

P062ABDF N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7m @VGS = 10V 25V 75A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC= 25 C 75 ID Continuous Drain Current TC= 100 C 50 A IDM 170 Pulsed Drain Current1 IAS Avalanche Curr... See More ⇒

Detailed specifications: P0603BDG, P0603BDL, P0603BEAD, P0603BK, P0603BT, P0603BV, P0604BD, P0610BTF, IRFB3206, P062ABDD, P062ABDF, P0660AS, P0660AT, P0660ATF, P0690ATF, P0690ATFS, P06B03LVG

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