P0690ATF MOSFET. Datasheet pdf. Equivalent
Type Designator: P0690ATF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 52 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 190 nS
Drain-Source Capacitance (Cd): 89 pF
Maximum Drain-Source On-State Resistance (Rds): 2.35 Ohm
Package: TO220F
P0690ATF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P0690ATF Datasheet (PDF)
1.1. p0690atf-s.pdf 
Size:464K _unikc
P0690ATF / P0690ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.35Ω @VGS = 10V 900V 6A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 900 V VGS Gate-Source Voltage ±30 TC = 25 ° C 6 ID Continuous Drain Current2 TC = 100 ° A C 3.5 IDM
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