P06B03LVG Datasheet. Specs and Replacement

Type Designator: P06B03LVG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOP8

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P06B03LVG datasheet

 ..1. Size:355K  unikc
 p06b03lvg.pdf pdf_icon

P06B03LVG

P06B03LVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 50m @VGS = -10V -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -6 ID Continuous Drain Current TA = 70 A C -5 IDM -30 Pulsed Drain Curre... See More ⇒

 ..2. Size:355K  niko-sem
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P06B03LVG

P06B03LVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 50m @VGS = -10V -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -6 ID Continuous Drain Current TA = 70 A C -5 IDM -30 Pulsed Drain Curre... See More ⇒

 ..3. Size:869K  cn vbsemi
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P06B03LVG

P06B03LVG www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vi... See More ⇒

Detailed specifications: P062ABD8, P062ABDD, P062ABDF, P0660AS, P0660AT, P0660ATF, P0690ATF, P0690ATFS, IRFZ44N, P06P03LCG, P06P03LCGA, P06P03LDG, P06P03LVG, P9006EDG, P9006EI, P9006EL, P9006ESG

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