P0703BD Datasheet. Specs and Replacement

Type Designator: P0703BD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 306 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO252

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P0703BD datasheet

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 p0703bd.pdf pdf_icon

P0703BD

P0703BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7.5m @VGS = 10V 30V 57A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 57 ID Continuous Drain Current TC= 100 C 36 A IDM 160 Pulsed Drain Current1 ... See More ⇒

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 p0703ed.pdf pdf_icon

P0703BD

P0703ED P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7.5m @VGS = -10V -68A -30V TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 V TC= 25 C -68 ID Continuous Drain Current2 TC= 100 C -43 A IDM -160 ... See More ⇒

 9.2. Size:494K  unikc
 p0703ev.pdf pdf_icon

P0703BD

P0703EV P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7.5m @VGS = -10V -30V -15A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -15 ID Continuous Drain Current TA = 70 C -11 A IDM -67 Pu... See More ⇒

Detailed specifications: P06P03LDG, P06P03LVG, P9006EDG, P9006EI, P9006EL, P9006ESG, P9006ETF, P9006EVG, IRLZ44N, P0703ED, P0703EV, P0765ATF, P0765GTF, P0765GTFS, P0770EI, P0770EIS, P0770ETF

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