All MOSFET. P0765ATF Datasheet

 

P0765ATF MOSFET. Datasheet pdf. Equivalent

Type Designator: P0765ATF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 52 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 153 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO220F

P0765ATF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P0765ATF Datasheet (PDF)

1.1. p0765atf.pdf Size:432K _unikc

P0765ATF
P0765ATF

P0765ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 650V 1.5Ω @VGS = 10V 7A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 TC = 25 ° C 7 ID Continuous Drain Current2 TC = 100 ° C 4.2 A IDM 28 Pulsed Drain Curren

5.1. p0765gtf-s.pdf Size:502K _unikc

P0765ATF
P0765ATF

P0765GTF / P0765GTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.5Ω @VGS = 10V 650V 7A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 TC = 25 ° C 7 ID Continuous Drain Current2 TC = 100 ° C 4 A IDM

Datasheet: P9006EI , P9006EL , P9006ESG , P9006ETF , P9006EVG , P0703BD , P0703ED , P0703EV , IRF3710 , P0765GTF , P0765GTFS , P0770EI , P0770EIS , P0770ETF , P0770ETFS , P0780ATF , P0780ATFS .

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