P0765ATF Datasheet. Specs and Replacement
Type Designator: P0765ATF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 153 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220F
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P0765ATF datasheet
p0765atf.pdf
P0765ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 650V 1.5 @VGS = 10V 7A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 TC = 25 C 7 ID Continuous Drain Current2 TC = 100 C 4.2 A IDM 28 Pulsed Drain Curren... See More ⇒
p0765gtf-s.pdf
P0765GTF / P0765GTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.5 @VGS = 10V 650V 7A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 TC = 25 C 7 ID Continuous Drain Current2 TC = 100 C 4 A IDM ... See More ⇒
p0765jd.pdf
N-Channel Enhancement Mode P0765JD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID 650V 600m 7A G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC = ... See More ⇒
Detailed specifications: P9006EI, P9006EL, P9006ESG, P9006ETF, P9006EVG, P0703BD, P0703ED, P0703EV, IRFZ44, P0765GTF, P0765GTFS, P0770EI, P0770EIS, P0770ETF, P0770ETFS, P0780ATF, P0780ATFS
Keywords - P0765ATF MOSFET specs
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