P0908ATF
MOSFET. Datasheet pdf. Equivalent
Type Designator: P0908ATF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 37
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 43
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 55
nC
trⓘ - Rise Time: 45
nS
Cossⓘ -
Output Capacitance: 355
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
TO220F
P0908ATF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P0908ATF
Datasheet (PDF)
..1. Size:810K unikc
p0908atf.pdf 
P0908ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V80V 43ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C43IDContinuous Drain Current2TC = 100 C27AIDM160Pulsed Drain Current1,2IASAvalanche Current 38
..2. Size:172K niko-sem
p0908atf.pdf
N-Channel Enhancement Mode P0908ATFNIKO-SEM Field Effect Transistor TO-220FHalogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 9m 80V 43A G 2.DRAIN 3.SOURCESABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS 20 VTC = 25 C 43 Continuous Drain Current2 ID T
7.1. Size:568K unikc
p0908at.pdf
P0908ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V80V 64ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 20TC = 25 C64IDContinuous Drain CurrentTC = 100 C41AIDM160Pulsed Drain Current1
8.1. Size:798K unikc
p0908ad.pdf
P0908ADN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V80V 69ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C69IDContinuous Drain Current3TC= 100 C44AIDM160Pulsed Drain Current1,2IASAvalanche Cu
8.2. Size:179K niko-sem
p0908ad.pdf
N-Channel Logic Level Enhancement P0908ADNIKO-SEM TO-252Mode Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 9m 80V 69A G 2.DRAIN 3.SOURCESABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS 20 VTC = 25 C 69 Continuous Drain Current
8.3. Size:243K niko-sem
p0908ak.pdf
N-Channel Enhancement Mode P0908AKNIKO-SEM Field Effect Transistor PDFN 5x6PHalogen-Free & Lead-FreeDD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G80V 9m 50A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 80 VGate-Source Voltage VGS
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
