P0910ATG
MOSFET. Datasheet pdf. Equivalent
Type Designator: P0910ATG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 156
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 89
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 217
nC
trⓘ - Rise Time: 205
nS
Cossⓘ -
Output Capacitance: 900
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095
Ohm
Package:
TO220
P0910ATG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P0910ATG
Datasheet (PDF)
..1. Size:360K unikc
p0910atg.pdf 
P0910ATGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 9.5m @VGS = 10V 89ATO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C89IDContinuous Drain Current1TC = 100 C63AIDM250Pulsed Drain Current2IASAvalanche Current 11
7.1. Size:374K unikc
p0910atf.pdf
P0910ATF N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 9.5m @VGS = 10V 54ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C54IDContinuous Drain Current1TC = 100 C38AIDM150Pulsed Drain Current2IASAvalanche Current
8.1. Size:542K unikc
p0910as.pdf
P0910AS N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9.5m @VGS = 10V100V 80A TO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C80IDContinuous Drain CurrentTC = 100 C50AIDM250Pulsed Drain Current1IASAvalanche Current 72
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