P0925BTF Datasheet. Specs and Replacement

Type Designator: P0925BTF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: TO220F

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P0925BTF datasheet

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P0925BTF

P0925BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 420m @VGS = 10V 250V 9A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 9 ID Continuous Drain Current TC = 100 C 5.4 A IDM 36 Pulsed Drain Current1 IAS Avalanche Current 12 ... See More ⇒

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P0925BTF

P0925AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.48 @VGS = 10V 250V 9A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 9 ID Continuous Drain Current2 TC = 100 C 5.4 A IDM 36 Pulsed Drain Current1 IAS Avalanche Current 9 EA... See More ⇒

Detailed specifications: P0910AS, P0910ATF, P0910ATG, P0920AD, P0920AT, P0920ATF, P0920BD, P0925AD, 12N60, P092ABD, P0950ETF, P0950ETFS, P0990AU, P1003BDF, P1003BK, P1003EK, P1003EVG

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