P1006BD PDF and Equivalents Search

 

P1006BD PDF Specs and Replacement


   Type Designator: P1006BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 66 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO252
 

 P1006BD substitution

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P1006BD PDF Specs

 ..1. Size:731K  unikc
p1006bd.pdf pdf_icon

P1006BD

P1006BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10m @VGS = 10V 60V 66A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V TC = 25 C 66 ID Continuous Drain Current2 TC = 100 C 42 A IDM 150 Pulsed Drain Curren... See More ⇒

 ..2. Size:346K  niko-sem
p1006bd.pdf pdf_icon

P1006BD

P1006BD N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 10m 66A G 1 GATE 2 DRAIN 3 SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25... See More ⇒

 8.1. Size:707K  unikc
p1006bis.pdf pdf_icon

P1006BD

P1006BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10m @VGS = 10V 60V 66A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V TC= 25 C 66 ID Continuous Drain Current2 TC= 100 C 42 A IDM 150 Pulsed Drain Cur... See More ⇒

 8.2. Size:429K  unikc
p1006bk.pdf pdf_icon

P1006BD

P1006BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10m @VGS = 10V 60V 43A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V Tc = 25 C 43 ID Continuous Drain Current3 Tc = 100 C 27 IDM 120 Pulsed Drain Curren... See More ⇒

Detailed specifications: P0990AU , P1003BDF , P1003BK , P1003EK , P1003EVG , P1004BD , P1004BS , P1004HV , 2SK3568 , P1006BIS , P1006BK , P1006BT , P1006BTF , P1006BTFS , P1060AT , P1060ATF , P1060ATFS .

Keywords - P1006BD MOSFET specs

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