P1006BIS Datasheet. Specs and Replacement
Type Designator: P1006BIS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 215 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO251
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P1006BIS substitution
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P1006BIS datasheet
p1006bis.pdf
P1006BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10m @VGS = 10V 60V 66A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V TC= 25 C 66 ID Continuous Drain Current2 TC= 100 C 42 A IDM 150 Pulsed Drain Cur... See More ⇒
p1006bk.pdf
P1006BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10m @VGS = 10V 60V 43A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V Tc = 25 C 43 ID Continuous Drain Current3 Tc = 100 C 27 IDM 120 Pulsed Drain Curren... See More ⇒
p1006bt.pdf
P1006BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10m @VGS = 10V 60V 61A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC= 25 C 61 ID Continuous Drain Current2 TC= 100 C 39 A IDM 150 Pulsed Drain Current1 ... See More ⇒
p1006btf-s.pdf
P1006BTF / P1006BTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10m @VGS = 10V 60V 47A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC= 25 C 47 ID Continuous Drain Current TC= 100 C 29 A IDM 150... See More ⇒
Detailed specifications: P1003BDF, P1003BK, P1003EK, P1003EVG, P1004BD, P1004BS, P1004HV, P1006BD, IRF2807, P1006BK, P1006BT, P1006BTF, P1006BTFS, P1060AT, P1060ATF, P1060ATFS, P1060ETF
Keywords - P1006BIS MOSFET specs
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