P1060ATF Datasheet. Specs and Replacement

Type Designator: P1060ATF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220F

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P1060ATF datasheet

 0.1. Size:523K  unikc
 p1060atf-s.pdf pdf_icon

P1060ATF

P1060ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.75 @VGS = 10V 600V 10A 100% UIS tested TO-220F(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC= 25 C 10 ID Continuous Drain Current2 TC= 100 C 6.2 A IDM... See More ⇒

 7.1. Size:462K  unikc
 p1060at.pdf pdf_icon

P1060ATF

P1060AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 0.75 @VGS = 10V 10A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 10 ID Continuous Drain Current2 TC = 100 C 6 A IDM 40 Pulsed Drain Current... See More ⇒

 9.1. Size:885K  unikc
 p1060etf-s.pdf pdf_icon

P1060ATF

P1060ETF / P1060ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.77 @VGS = 10V 600V 10A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC= 25 C 10 ID Continuous Drain Current2 TC= 100 C 6 A IDM ... See More ⇒

 9.2. Size:235K  niko-sem
 p1060etfna.pdf pdf_icon

P1060ATF

P1060ETFNA N-Channel Enhancement Mode NIKO-SEM TO-220FN Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 600V 0.75 10A 3. SOURCE S 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Vol... See More ⇒

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Detailed specifications: P1004HV, P1006BD, P1006BIS, P1006BK, P1006BT, P1006BTF, P1006BTFS, P1060AT, IRF1405, P1060ATFS, P1060ETF, P1060ETFS, P1065AT, P1065ATF, P106AAT, P1070ATF, P1070ATFS

Keywords - P1060ATF MOSFET specs

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