P1060ATF MOSFET PDF: N-Ch, 600V, 10A. Full specification with pinout and replacement list

P1060ATF PDF Specs and Replacement

   Type Designator: P1060ATF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F

P1060ATF substitution

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P1060ATF PDF Specs

0.1. Size:523K unikc
p1060atf-s.pdf pdf_icon

P1060ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.75 @VGS = 10V 600V 10A 100% UIS tested TO-220F(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC= 25 C 10 ID Continuous Drain Current2 TC= 100 C 6.2 A IDM... See More ⇒

7.1. Size:462K unikc
p1060at.pdf pdf_icon

P1060AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 0.75 @VGS = 10V 10A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 10 ID Continuous Drain Current2 TC = 100 C 6 A IDM 40 Pulsed Drain Current... See More ⇒

9.1. Size:885K unikc
p1060etf-s.pdf pdf_icon

P1060ETF / P1060ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.77 @VGS = 10V 600V 10A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC= 25 C 10 ID Continuous Drain Current2 TC= 100 C 6 A IDM ... See More ⇒

9.2. Size:235K niko-sem
p1060etfna.pdf pdf_icon

P1060ETFNA N-Channel Enhancement Mode NIKO-SEM TO-220FN Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 600V 0.75 10A 3. SOURCE S 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Vol... See More ⇒

Detailed specifications: P1004HV , P1006BD , P1006BIS , P1006BK , P1006BT , P1006BTF , P1006BTFS , P1060AT , 20N50 , P1060ATFS , P1060ETF , P1060ETFS , P1065AT , P1065ATF , P106AAT , P1070ATF , P1070ATFS .