All MOSFET. P1065AT Datasheet

 

P1065AT MOSFET. Datasheet pdf. Equivalent

Type Designator: P1065AT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 113 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 137 pF

Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm

Package: TO220

P1065AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P1065AT Datasheet (PDF)

1.1. p1065atf.pdf Size:470K _unikc

P1065AT
P1065AT

P1065ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 650V 0.75Ω @VGS = 10V 10A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 TC = 25 ° C 10 ID Continuous Drain Current2 TC = 100 ° C 6 A IDM 35 Pulsed Drain Curre

1.2. p1065at.pdf Size:343K _unikc

P1065AT
P1065AT

P1065AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 650V 0.75Ω @VGS = 10V 10A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 TC = 25 ° C 10 ID Continuous Drain Current2 TC = 100 ° A C 5 IDM 30 Pulsed Drain Current1

 

Datasheet: P1006BT , P1006BTF , P1006BTFS , P1060AT , P1060ATF , P1060ATFS , P1060ETF , P1060ETFS , J113 , P1065ATF , P106AAT , P1070ATF , P1070ATFS , P1103BEA , P1103BVG , P117AATX , P1203BD .

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