P1065AT Datasheet. Specs and Replacement

Type Designator: P1065AT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 137 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220

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P1065AT datasheet

 ..1. Size:343K  unikc
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P1065AT

P1065AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 650V 0.75 @VGS = 10V 10A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 TC = 25 C 10 ID Continuous Drain Current2 TC = 100 A C 5 IDM 30 Pulsed Drain Current1... See More ⇒

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P1065AT

P1065ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 650V 0.75 @VGS = 10V 10A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 TC = 25 C 10 ID Continuous Drain Current2 TC = 100 C 6 A IDM 35 Pulsed Drain Curre... See More ⇒

 9.1. Size:259K  niko-sem
p1065etf.pdf pdf_icon

P1065AT

P1065ETF NIKO-SEM N-Channel Enhancement Mode TO-220F Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 650V 0.77 10A 3. SOURCE S ABSOLUTE MAXIMUN RATINGS(TA=25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC = 25 ... See More ⇒

Detailed specifications: P1006BT, P1006BTF, P1006BTFS, P1060AT, P1060ATF, P1060ATFS, P1060ETF, P1060ETFS, IRF530, P1065ATF, P106AAT, P1070ATF, P1070ATFS, P1103BEA, P1103BVG, P117AATX, P1203BD

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