All MOSFET. P1065ATF Datasheet

 

P1065ATF Datasheet and Replacement


   Type Designator: P1065ATF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 221 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F
 

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P1065ATF Datasheet (PDF)

 ..1. Size:470K  unikc
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P1065ATF

P1065ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID650V 0.75 @VGS = 10V 10ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650VVGSGate-Source Voltage 30TC = 25 C10IDContinuous Drain Current2TC = 100 C6AIDM35Pulsed Drain Curre

 7.1. Size:343K  unikc
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P1065ATF

P1065ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID650V 0.75 @VGS = 10V 10ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650VVGSGate-Source Voltage 30TC = 25 C10IDContinuous Drain Current2TC = 100 AC5IDM30Pulsed Drain Current1

 9.1. Size:259K  niko-sem
 p1065etf.pdf pdf_icon

P1065ATF

P1065ETF NIKO-SEM N-Channel Enhancement Mode TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G650V 0.77 10A 3. SOURCE SABSOLUTE MAXIMUN RATINGS(TA=25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC = 25

Datasheet: P1006BTF , P1006BTFS , P1060AT , P1060ATF , P1060ATFS , P1060ETF , P1060ETFS , P1065AT , 2N60 , P106AAT , P1070ATF , P1070ATFS , P1103BEA , P1103BVG , P117AATX , P1203BD , P1203BEA .

Keywords - P1065ATF MOSFET datasheet

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