P1065ATF Datasheet. Specs and Replacement
Type Designator: P1065ATF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 221 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220F
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P1065ATF datasheet
p1065atf.pdf
P1065ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 650V 0.75 @VGS = 10V 10A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 TC = 25 C 10 ID Continuous Drain Current2 TC = 100 C 6 A IDM 35 Pulsed Drain Curre... See More ⇒
p1065at.pdf
P1065AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 650V 0.75 @VGS = 10V 10A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 TC = 25 C 10 ID Continuous Drain Current2 TC = 100 A C 5 IDM 30 Pulsed Drain Current1... See More ⇒
p1065etf.pdf
P1065ETF NIKO-SEM N-Channel Enhancement Mode TO-220F Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 650V 0.77 10A 3. SOURCE S ABSOLUTE MAXIMUN RATINGS(TA=25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC = 25 ... See More ⇒
Detailed specifications: P1006BTF, P1006BTFS, P1060AT, P1060ATF, P1060ATFS, P1060ETF, P1060ETFS, P1065AT, AO3407, P106AAT, P1070ATF, P1070ATFS, P1103BEA, P1103BVG, P117AATX, P1203BD, P1203BEA
Keywords - P1065ATF MOSFET specs
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