All MOSFET. P1260AT Datasheet

 

P1260AT MOSFET. Datasheet pdf. Equivalent


   Type Designator: P1260AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 223 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46.5 nC
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 281 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220

 P1260AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P1260AT Datasheet (PDF)

 ..1. Size:474K  unikc
p1260at.pdf

P1260AT P1260AT

P1260ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID600V 0.65 @VGS = 10V 12ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C12IDContinuous Drain Current2TC = 100 C8.5AIDM48Pulsed Drain Curre

 0.1. Size:470K  unikc
p1260atf.pdf

P1260AT P1260AT

P1260ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID600V 0.65 @VGS = 10V 12ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C12IDContinuous Drain Current2TC = 100 C8.5AIDM48Pulsed Drain Cur

 9.1. Size:996K  kexin
dmp1260.pdf

P1260AT P1260AT

SMD Type MOSFETP-Channel MOSFETDMP1260 (KMP1260)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3.3 A1 2 RDS(ON) 75m (VGS =-4.5V)+0.1+0.050.95 -0.1 0.1-0.01 RDS(ON) 140m (VGS =-2.5V)+0.11.9 -0.11. GateDrain2. Source3. DrainGateSource Absolute Maximum Ratings Ta = 25Parameter Symbol R

 9.2. Size:409K  ncepower
ncep1260f.pdf

P1260AT P1260AT

Pb Free Producthttp://www.ncepower.com NCEP1260FNCE N-Channel Super Trench Power MOSFET Description The NCEP1260F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: RLP1N06CLE

 

 
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