All MOSFET. P1350AT Datasheet

 

P1350AT MOSFET. Datasheet pdf. Equivalent

Type Designator: P1350AT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 192 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 40 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 204 pF

Maximum Drain-Source On-State Resistance (Rds): 0.52 Ohm

Package: TO220

P1350AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P1350AT Datasheet (PDF)

..1. p1350at.pdf Size:471K _unikc

P1350AT P1350AT

P1350ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID500V 0.52 @VGS = 10V 13ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C13IDContinuous Drain Current2TC = 100 C10AIDM45Pulsed Drain Curren

0.1. p1350atf-s.pdf Size:411K _unikc

P1350AT P1350AT

P1350ATF / P1350ATFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID500V 0.52 @VGS = 10V 13ATO-220F TO-220FS 100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C13IDContinuous Drain Current2TC = 100

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , K2611 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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