All MOSFET. P1402CDG Datasheet

 

P1402CDG Datasheet and Replacement


   Type Designator: P1402CDG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 364 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252
 

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P1402CDG Datasheet (PDF)

 ..1. Size:548K  unikc
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P1402CDG

P1402CDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = 4.5V20V 45ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 12 VTC = 25 C45IDContinuous Drain CurrentTC = 100 C19AIDM140Pulsed Drain Current1IASAvalanche Current 33

 ..2. Size:843K  cn vbsemi
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P1402CDG

P1402CDGwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOL

 9.1. Size:478K  onsemi
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P1402CDG

Ordering number : ENA2303A PCP1402 Power MOSFET http://onsemi.com 250V, 2.4, 1.2A, Single N-Channel Features On-resistance RDS(on)=1.8 (typ) Input Capacitance Ciss=210pF (typ) Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value UnitDrain to Source Voltage VDSS 250 V Gate to Source Voltage VG

Datasheet: P1260AT , P1260ATF , P1308AK , P1308ATFG , P1308ATG , P1350AT , P1350ATF , P1350ATFS , IRFZ44N , P1403CV , P1403EK , P1403EV8 , P1503BVG , P1503HK , P1503HV , P1504BDG , P1504BVG .

History: HM6409 | IPD088N06N3G | IRFP440R | CS12N65FA9R | QS8M51 | MME70R380PRH | 25N10L-TF3-T

Keywords - P1402CDG MOSFET datasheet

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