All MOSFET. P1402CDG Datasheet


P1402CDG MOSFET. Datasheet pdf. Equivalent

Type Designator: P1402CDG

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.25 V

Maximum Drain Current |Id|: 45 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 34 nC

Rise Time (tr): 83 nS

Drain-Source Capacitance (Cd): 364 pF

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: TO252

P1402CDG Transistor Equivalent Substitute - MOSFET Cross-Reference Search


P1402CDG Datasheet (PDF)

..1. p1402cdg.pdf Size:548K _unikc

P1402CDG P1402CDG

P1402CDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = 4.5V20V 45ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 12 VTC = 25 C45IDContinuous Drain CurrentTC = 100 C19AIDM140Pulsed Drain Current1IASAvalanche Current 33

..2. p1402cdg.pdf Size:843K _cn_vbsemi

P1402CDG P1402CDG

P1402CDGwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOL

9.1. pcp1402.pdf Size:478K _onsemi

P1402CDG P1402CDG

Ordering number : ENA2303A PCP1402 Power MOSFET 250V, 2.4, 1.2A, Single N-Channel Features On-resistance RDS(on)=1.8 (typ) Input Capacitance Ciss=210pF (typ) Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value UnitDrain to Source Voltage VDSS 250 V Gate to Source Voltage VG

Datasheet: P1260AT , P1260ATF , P1308AK , P1308ATFG , P1308ATG , P1350AT , P1350ATF , P1350ATFS , IRF3205 , P1403CV , P1403EK , P1403EV8 , P1503BVG , P1503HK , P1503HV , P1504BDG , P1504BVG .


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