P1402CDG - Даташиты. Аналоги. Основные параметры

P1402CDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14m @VGS = 4.5V 20V 45A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 12 V TC = 25 C 45 ID Continuous Drain Current TC = 100 C 19 A IDM 140 Pulsed Drain Current1 IAS Avalanche Current 33

P1402CDG www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOL

Ordering number ENA2303A PCP1402 Power MOSFET http //onsemi.com 250V, 2.4 , 1.2A, Single N-Channel Features On-resistance RDS(on)=1.8 (typ) Input Capacitance Ciss=210pF (typ) Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS 250 V Gate to Source Voltage VG