P1604ETF Datasheet. Specs and Replacement

Type Designator: P1604ETF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 438 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO220F

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P1604ETF datasheet

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P1604ETF

P1604ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 16m @VGS = -10V -40A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -40 ID Continuous Drain Current TC = 100 C -25 A IDM -120 Pulsed Drai... See More ⇒

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P1604ETF

P1604ET P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 16m @VGS = -10V -40V -65A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -65 ID Continuous Drain Current2 TC = 100 C -42 A IDM -120 Pulsed Drain... See More ⇒

 8.1. Size:592K  unikc
 p1604ed.pdf pdf_icon

P1604ETF

P1604ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 16m @VGS = -10V -43A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -43 ID Continuous Drain Current TC = 100 C -34 A IDM -130 Pulsed Drain Cu... See More ⇒

Detailed specifications: P1603BD, P1603BEB, P1603BEBA, P1603BEBB, P1603BV, P1603BVA, P1604ED, P1604ET, IRFB4227, P1606BD, P1610AD, P1610AT, P1703BDG, P2610ADG, P2610AI, P2610ATFG, P2610ATG

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