All MOSFET. P1604ETF Datasheet

 

P1604ETF Datasheet and Replacement


   Type Designator: P1604ETF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 438 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO220F
 

 P1604ETF substitution

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P1604ETF Datasheet (PDF)

 ..1. Size:379K  unikc
 p1604etf.pdf pdf_icon

P1604ETF

P1604ETFP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID -40V 16m @VGS = -10V -40ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-40IDContinuous Drain CurrentTC = 100 C-25AIDM-120Pulsed Drai

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 p1604et.pdf pdf_icon

P1604ETF

P1604ETP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID16m @VGS = -10V -40V -65ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-65IDContinuous Drain Current2TC = 100 C-42AIDM-120Pulsed Drain

 8.1. Size:592K  unikc
 p1604ed.pdf pdf_icon

P1604ETF

P1604EDP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-40V 16m @VGS = -10V -43ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-43IDContinuous Drain CurrentTC = 100 C-34AIDM-130Pulsed Drain Cu

Datasheet: P1603BD , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , IRFP250N , P1606BD , P1610AD , P1610AT , P1703BDG , P2610ADG , P2610AI , P2610ATFG , P2610ATG .

History: FCP11N60

Keywords - P1604ETF MOSFET datasheet

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