P1604ETF Specs and Replacement
Type Designator: P1604ETF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 438 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO220F
P1604ETF substitution
P1604ETF datasheet
p1604etf.pdf
P1604ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 16m @VGS = -10V -40A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -40 ID Continuous Drain Current TC = 100 C -25 A IDM -120 Pulsed Drai... See More ⇒
p1604et.pdf
P1604ET P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 16m @VGS = -10V -40V -65A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -65 ID Continuous Drain Current2 TC = 100 C -42 A IDM -120 Pulsed Drain... See More ⇒
p1604ed.pdf
P1604ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 16m @VGS = -10V -43A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -43 ID Continuous Drain Current TC = 100 C -34 A IDM -130 Pulsed Drain Cu... See More ⇒
Detailed specifications: P1603BD , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , 2N7000 , P1606BD , P1610AD , P1610AT , P1703BDG , P2610ADG , P2610AI , P2610ATFG , P2610ATG .
Keywords - P1604ETF MOSFET specs
P1604ETF cross reference
P1604ETF equivalent finder
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