P2610ATG Specs and Replacement

Type Designator: P2610ATG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 128 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 887 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: TO220

P2610ATG substitution

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P2610ATG datasheet

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 p2610atg.pdf pdf_icon

P2610ATG

P2610ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 26m @VGS = 10V 50A TO-220 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 50 ID Continuous Drain Current TC = 100 C 31 A IDM 200 Pulsed Drain Current1 IAS Avalan... See More ⇒

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 p2610atfg.pdf pdf_icon

P2610ATG

P2610ATFG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 26m @VGS = 10V 31A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 31 ID Continuous Drain Current TC = 100 C 19 A IDM 130 ... See More ⇒

 8.1. Size:446K  unikc
 p2610adg.pdf pdf_icon

P2610ATG

P2610ADG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 26m @VGS = 10V 100V 50A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 50 ID Continuous Drain Current TC = 100 C 35.5 A IDM 150 Pulsed Drain Cur... See More ⇒

 8.2. Size:485K  unikc
 p2610ai.pdf pdf_icon

P2610ATG

P2610AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 26m @VGS = 10V 100V 32A TO-251 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 32 ID Continuous Drain Current TC = 100 C 20 A IDM 100 Pulsed Drain Current1 IAS Avalanche Current 53 E... See More ⇒

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Detailed specifications: P1604ETF, P1606BD, P1610AD, P1610AT, P1703BDG, P2610ADG, P2610AI, P2610ATFG, 2SK3878, P2610BD, P2610BS, P2610BT, P2615ATFG, P2615ATG, P261AFEA, P261ALV, P1810ATX

Keywords - P2610ATG MOSFET specs

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