All MOSFET. IRCZ345 Datasheet

 

IRCZ345 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRCZ345
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO220

 IRCZ345 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRCZ345 Datasheet (PDF)

 8.1. Size:128K  international rectifier
 ircz34.pdf

IRCZ345 IRCZ345

PD - 9.590AIRCZ34HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 60V Current Sense 175C Operating TemperatureRDS(on) = 0.050 Fast Switching Ease of ParallelingID = 30A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance and

Datasheet: IRCP250 , IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , 2SK3568 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL .

 

 
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