IRCZ345 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRCZ345
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 88 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm
Package: TO220
IRCZ345 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRCZ345 Datasheet (PDF)
8.1. ircz34.pdf 
Size:128K _international_rectifier
PD - 9.590AIRCZ34HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 60V Current Sense 175C Operating TemperatureRDS(on) = 0.050 Fast Switching Ease of ParallelingID = 30A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance and
Datasheet: IRCP250 , IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRFZ46N , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL .
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