All MOSFET. IRCZ345 Datasheet


IRCZ345 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRCZ345

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 88 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: TO220

IRCZ345 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRCZ345 Datasheet (PDF)

8.1. ircz34.pdf Size:128K _international_rectifier


PD - 9.590A IRCZ34 HEXFET® Power MOSFET Dynamic dv/dt Rating VDSS = 60V Current Sense 175°C Operating Temperature RDS(on) = 0.050Ω Fast Switching Ease of Paralleling ID = 30A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and

Datasheet: IRCP250 , IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , 2SK3569 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL .


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