IRCZ345 Datasheet and Replacement
Type Designator: IRCZ345
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO220
IRCZ345 substitution
IRCZ345 Datasheet (PDF)
ircz34.pdf
PD - 9.590AIRCZ34HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 60V Current Sense 175C Operating TemperatureRDS(on) = 0.050 Fast Switching Ease of ParallelingID = 30A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance and
Datasheet: IRCP250 , IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , 2N7000 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL .
History: RJK2017DPE | 2SJ209 | STD12N65M5
Keywords - IRCZ345 MOSFET datasheet
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History: RJK2017DPE | 2SJ209 | STD12N65M5
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