IRCZ345 Datasheet. Specs and Replacement

Type Designator: IRCZ345  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO220

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IRCZ345 datasheet

 8.1. Size:128K  international rectifier
 ircz34.pdf pdf_icon

IRCZ345

PD - 9.590A IRCZ34 HEXFET Power MOSFET Dynamic dv/dt Rating VDSS = 60V Current Sense 175 C Operating Temperature RDS(on) = 0.050 Fast Switching Ease of Paralleling ID = 30A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and... See More ⇒

Detailed specifications: IRCP250, IRCP254, IRCP340, IRCP350, IRCP440, IRCP450, IRCZ14, IRCZ245, IRFP064N, IRCZ445, IRF044, IRF054, IRF1010E, IRF1010EL, IRF1010ES, IRF1010N, IRF1010NL

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