IRCZ345 PDF Specs and Replacement
Type Designator: IRCZ345
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO220
IRCZ345 substitution
IRCZ345 PDF Specs
ircz34.pdf
PD - 9.590A IRCZ34 HEXFET Power MOSFET Dynamic dv/dt Rating VDSS = 60V Current Sense 175 C Operating Temperature RDS(on) = 0.050 Fast Switching Ease of Paralleling ID = 30A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and... See More ⇒
Detailed specifications: IRCP250 , IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRF4905 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL .
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
