P2003BDG Specs and Replacement
Type Designator: P2003BDG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 161 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
P2003BDG substitution
- MOSFET ⓘ Cross-Reference Search
P2003BDG datasheet
p2003bdg.pdf
P2003BDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 25V 28A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC= 25 C 28 ID Continuous Drain Current TC= 100 C 18 A IDM 90 Pulsed Drai... See More ⇒
p2003bea.pdf
P2003BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 10A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 TC = 25 C 28 TC = 100 C 18 ID Continuous Drain Current TA = 25 C 10 A TA =... See More ⇒
p2003bvg.pdf
P2003BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 9A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 25 TA = 25 C 9 ID Continuous Drain Current TA = 70 C 7 A IDM 32 Pulsed Drain Current1 IAS... See More ⇒
Detailed specifications: P2615ATG, P261AFEA, P261ALV, P1810ATX, P1820AD, P1820BD, P1825AD, P1825AT, 13N50, P3504BD, P3506DD, P3506DT, P3506DTF, P3606BD, P3606HK, P4404EDG, P4404EI
Keywords - P2003BDG MOSFET specs
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